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Enhanced Performance of Au/P3HT/(Bilayer Dielectrics)/Si Thin-Film-Transistor Having Gold Nanoparticles Chemically Bonded to P3HT

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Abstract:

The charge transport enhancement of using poly(3-hexylthiophene) covalently bonded with gold nanoparticles as an active layer in a bottom-gate/top contact, Au/(P3HT)/(bilayer dielectric)/Si OTFT device has been studied. P3HT was synthesized via the modified Grignard metathesis method and functionalized to have a thiol terminal (P3HTSH). Gold nanoparticles (AuNPs) with sizes ranging from 2 to 10 nm were then formed via a reduction of HAuCl4 in the presence of P3HTSH. Compared to the pristine P3HT, the AuNPs-containing P3HT composite materials have a higher energy level of HOMO and a smaller electrochemical bandgap E g chem. The smaller bandgap enhances the charge carrier mobility and the higher HOMO energy level indicates a reduced barrier and an increased injection rate for charge carrier at the source contact. Furthermore, the threshold voltage V T of AuNPs-containing P3HT samples remain nearly unchanged and their saturation current I D and the field–effect mobility are higher. An OTFT device fabricated with a composite sample containing 1.30% AuNPs has a carrier mobility and saturation current nearly two time higher than pristine P3HT.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.5720

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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