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The memory devices constructed from the Ge-nanoclusters embedded GeOx layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclus-ters were observed by a high-resolution transmission electron microscopy. Using the
capacitance versus voltage (G–V) and the conductance versus voltage (G–V) characteristics measured under various frequencies, the memory effect observed in the G–V curves was dominantly attributed to the charge storage in the Ge nanoclusters.
Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (G–t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention
behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.
Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.