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Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy

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Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were ∼29.0 nm and 1.4 nm, respectively. The density was ∼6.0 × 1010 cm−2. The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.
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Keywords: ANTI QUANTUM DOTS (AQDS); GAAS; INAS; MIGRATION ENHANCED EPITAXY (MEE)

Document Type: Research Article

Publication date: 2012-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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