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The Effects of Graphene Doping on the In-Field Jc of MgB2 Wires

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The field and temperature dependence of the critical current density Jct were measured for both un-doped and graphene doped MgB2/Fe wires manufactured by 99.999% Crystalline Boron and 10% excess Magnesium (99%, 325 mesh). At 4.2 K and 10 T, Jct was estimated to be for the wire sintered at 800 °C for 30 minutes, the doped sample is almost improved as one order, compared with the best un-doped sample. At the same time, the temperature dependence of the upper critical field (H c2) and the irreversibility field (H irr) for the samples will also be included from the resistance (R)–temperature (T). A significant increase in the upper critical field is the main cause of the enhancement of the critical current density, Jct , in the high field region. The calculated active cross-sectional area fraction (AF ) represents the connectivity factor between adjacent grains. This value is decreased with wire samples, which is why the improvement of transport Jct is lower than the improvement of magnetic Jcm in diffusion bulk sample.
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Document Type: Research Article

Publication date: 2012-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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