Authors: Yun, Ju-Hyung; Park, Yun Chang; Yi, Junsin; Woo, Chang Su; Kim, Joondong

Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 2, February 2012 , pp. 1371-1374(4)

Publisher: American Scientific Publishers

Abstract:

Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si. A thin Au layer was deposited above the grown Si films, which formed a Schottky junction. Two types of Schottky solar cells were prepared on a fully a-Si film and a mixing of mc-Si and a-Si film. Under one sun illumination, the mixing of mc-Si and a-Si device provided 35% and 68.4% enhancement in the open circuit voltage and fill factor compared to that of the amorphous device.

Keywords: THIN FILM; SI; SCHOTTKY SOLAR CELLS; DOPING-FREE

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2012.4595

Publication date: 2012-02-01

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