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Microstructure and Electrical Property of TiN x Films Deposited by DC Reactive Magnetron Sputtering Superimposed Electromagnetic Field System

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TiN x films were successfully deposited by DC reactive magnetron sputtering superimposed EMF system without substrate heating. In case of DCMS 400 W + EMF 25 W, electrical property, reflectance and crystallinity of the TiN films were clearly improved by the enhancement of nitrification. The lowest sheet resistance of 2.9 Ω/□ (resistivity 5.8 × 10−5 Ωcm) was observed for the film deposited at F N2: 16%. Mixture phases of the (111) plane and (200) plane showed lower resistivity than only (200) single phase. Therefore it is confirmed that introduction of EMF system is promising technology to deposit TiN film.
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Keywords: ELECTROMAGNETIC FIELD; HIGH DENSITY PLASMA; REACTIVE MAGNETRON SPUTTERING; TIN

Document Type: Research Article

Publication date: 2012-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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