TiNx films were successfully deposited by DC reactive magnetron sputtering superimposed EMF system without substrate heating. In case of DCMS 400 W + EMF 25 W, electrical property, reflectance and crystallinity of the TiN films were clearly improved by the enhancement
of nitrification. The lowest sheet resistance of 2.9 Ω/□ (resistivity 5.8 × 10−5 Ωcm) was observed for the film deposited at FN2: 16%. Mixture phases of the (111) plane and (200) plane showed lower resistivity than only (200) single
phase. Therefore it is confirmed that introduction of EMF system is promising technology to deposit TiN film.
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