Microstructure and Electrical Property of TiN x Films Deposited by DC Reactive Magnetron Sputtering Superimposed Electromagnetic Field System
TiN x films were successfully deposited by DC reactive magnetron sputtering superimposed EMF system without substrate heating. In case of DCMS 400 W + EMF 25 W, electrical property, reflectance and crystallinity of the TiN films were clearly improved by the enhancement of nitrification. The lowest sheet resistance of 2.9 Ω/□ (resistivity 5.8 × 10−5 Ωcm) was observed for the film deposited at F N2: 16%. Mixture phases of the (111) plane and (200) plane showed lower resistivity than only (200) single phase. Therefore it is confirmed that introduction of EMF system is promising technology to deposit TiN film.
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Document Type: Research Article
Publication date: 2012-02-01
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