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New Polymeric Buffer Materials with Low Driving Voltage

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Abstract:

We present excellent polymeric buffer materials based on the poly(9,9-dioctylfluorene-co-N,N-di(phenyl)-N,N-di(3-carboethoxyphenyl)benzidine) (BFE) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped BFE with 3,5-dinitrobenzonitrile (35DNBN), a strong electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 7.2 cd/A and 5.5 lm/W are demonstrated from blue OLEDs with these doped polymeric anode buffer system. The 40 nm thick anode buffer material showed a similar current density–voltage (JV) behavior to that of PEDOT:PSS based device. Results reveal a practical way to fabricate the highly efficient solution processed devices for low cost production of printing devices for the future.

Keywords: LOW VOLTAGE; ORGANIC LIGHT EMITTING DIODE; P-DOPING; POLYMERIC ANODE BUFFER

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.4585

Publication date: February 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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