Effect of Solution-Processed NiO Thin Film as a Hole Transport Layer in Poly(3-hexylthiophene): [6,6]-Phenyl C61-Butyric Acid Methyl Ester Bulk Heterojunction Solar Cells

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In this study, solution-processed nickel oxide (NiO) thin film was investigated as a hole transport layer on anode to improve the performance of bulk heterojunction solar cell based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). We fabricated NiO thin film without any vacuum-related process. Characterization of the NiO film under this study shows that it has maximum transmittance of 93.22% and bandgap of 3.84 eV which are proper for solar cell. Insertion of the NiO layer affords to realize enhanced power conversion efficiency of 1.97% and fill factor of 52.11% showing improvement over existing cells. In addition, NiO suggests one solution of minimizing conventional problems of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) such as interfacial power losses, corrosion of indium tin oxide layer, and degradation of the devices. The value of such hole transporting and electron blocking properties is clearly demonstrated and could be applicable to other organic photovoltaics.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.4581

Publication date: February 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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