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The Impact of Structural Parameters on the Electrical Characteristics of Silicon Nano Wire Transistor Based on Non Equilibrium Green's Function

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Abstract:

In this paper we have used a fully ballistic quantum mechanical transport approach to analyse electrical characteristics of rectangular silicon nanowire field effect transistor in 7 nm gate length. We have investigated the impact of structural parameters of Gate all around Silicon nano wire transistor (GAA-SNWT) on its electrical characteristics in subthreshold regime. In particular we have shown the effect of increasing the Source/Drain and channel length (L S ,L D and L Ch) on short channel effects as well as change in body thickness and independent back gate voltage. We also investigate the effect of increasing the gate underlap on the electrical characteristics and on the switching speed of device. We show that if the L un is increased the gate capacitance and DIBL will reduce while the I ON/I OFF ratio is increased.

Keywords: DIBL; GATE ALL AROUND (GAA); NON EQUILIBRIUM GREEN'S FUNCTION (NEGF); QUADRUPLE GATE (QG); SNWT (SILICON NANO WIRE TRANSISTOR); UNDERLAP LENGTH

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.4647

Publication date: February 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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