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Carbon Nanowires Fabrications via Top Down Approach

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Carbon nanowires are fabricated by the Langmuir Blodgett (LB) method via the top down approach on amorphous carbon. Thick a-C films (500 nm to 1 μm) have been successfully deposited after the treatment on silicon. The anisotropic etching of carbon using reactive ion etching (RIE) has been verified giving near vertical sidewalls. The LB method for depositing monolayer requires a hydrophilic surface. Plasma treatment is being performed on the silicon oxide hard mask to reduce the surface energy thereby making the surface from hydrophobic to hydrophilic. PS balls which are being deposited by LB method have one disadvantage which is the low adhesion of the PS ball to the silicon oxide surface. This adhesion is being improved by subjecting the PS ball to annealing which changes the shape and increase the contact area between the PS balls and the silicon oxide surface. As carbon and PS ball is vulnerable to oxygen plasma, a modified recipe of CF4:Ar was being used to etch the silicon oxide hard mask. There is almost little chemical reaction of the CF4 on carbon and PS ball. Carbon nanowires were successfully fabricated using polystyrene (PS) balls of diameter 450 nm. Through a series of steps, carbon nanowire of 500 nm in length and diameter approximately 250 nm can be produced.
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Document Type: Research Article

Publication date: 2012-01-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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