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Preparation of Mo/Cu(In, Ga)Se2 Thin Films by One-Step Sputtering

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An attempt was made for preparing CIGS absorber layers by one-step sputtering of a quaternary target for eventual use such as large area CIGS solar cells. For fabricating the layers, a single quaternary target with pre-determined compositions of the constituents, Cu, In, Ga and Se was employed and the in-situ and post-annealing by RTP were performed. Then the layers were characterized by SEM, AFM, XPS, XRD and EDX. Indeed, the CIGS absorber layers with chalcopyrite structure could be successfully obtained. In addition, it was found that the very smooth surfaces could be obtained since the deposition was conducted by single-step sputtering. The present work shows that the one-step sputtering method can be a potential route for the economic preparation of CIGS absorber layers.


Document Type: Research Article


Publication date: 2012-01-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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