Flash lamp annealing (FLA) with millisecond-order pulse duration can crystallize μm-order-thick a-Si films on glass substrates through explosive crystallization (EC), and flash-lamp-crystallized (FLC) poly-Si films consist of densely-packed nanometer-sized fine grains.
We investigate the impact of the hydrogen concentration and the defect density of precursor a-Si films on crystallization mechanism and the microstructures of FLC poly-Si films, by comparing chemical–vapor–deposited (CVD) and sputtered precursor a-Si films. Transmission
electron microscopy (TEM) observation reveals that FLC poly-Si films with similar periodic microstructures are formed by the FLA of the two kinds of precursor films, meaning no significant influence of hydrogen atoms and defect density on crystallization mechanism. This high flexibility of
the properties of precursor a-Si films would contribute to a wide process window to reproducibly form FLC poly-Si films with the particular periodic microstructures.
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