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Control of Swelling Height of Si Crystal by Irradiating Ar Beam

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It has been found that ion implantation can induce a swelling (step-height) phenomenon on crystal surface. In this paper, we studied about the control of swelling height of Si crystal by irradiating Ar beam under various parameters (fluence, charge and energy). These irradiation parameters were regulated by an irradiation facility that enables to achieve the multiple ionization. For both charges, the swelling height was studied with the various fluencies of two different charges Ar1+ and Ar4+. The swelling height increased with increasing the fluence. The swelling height was also studied by changing energy of Ar4+ beam. The swelling height increased by increasing the energy. The obtained swelling heights are understood base on the contribution of ion-beam induced defect, which is evaluated by SRIM. By comparing with the previous results, it was found that the expansion phenomena also depend on irradiated ion. The swelling structures were found to be stable more than two months. The present results have shown that this method of producing swelling structure indicates the potential application to fabricate 3-D nanostructure.
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Document Type: Research Article

Publication date: 2012-01-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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