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A Comprehensive Model of Electrical Noise in AlGaAs/GaAs Long-wavelength Quantum Well Infrared Photodetectors

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We present the results of a comprehensive model for the electric noise simulation of a kind of nano-optoelectronics device: AlGaAs/GaAs long-wavelength quantum well infrared photodetectors (LW-QWIPs) in dark conditions by assuming a three-dimensional carrier transport in the barriers where the electrical field are obtained in a self-consistent way. This model takes into account all the fundamental mechanisms involved in the device detection process. The electrical field distribution, dark currents, electrical noise are carefully calculated and analyzed. The numerical results also explain well our experimental observations.
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Document Type: Research Article

Publication date: 01 December 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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