Fabrication and Photoluminescence of Er3+-Doped Al2O3 Thin Films with Sol–Gel Method
Erbium doped Al2O3 thin films were fabricated on quartz substrates in dip-coating process by sol– gel method, using the aluminum isopropoxide [Al(OC3H7)3]-derived AlOOH sols with the addition of erbium nitrate [Er(NO3)3·5H2O]. The as-deposited films, which erbium concentration was between 20 and 43 mol%, were annealed in air from 600 to 1200 °C. The phase structure was detected by X-ray diffraction (XRD) and the PL spectra in the wavelength range of 1400–1700 nm were investigated by spectrophotometer, which was exited by a 760 nm semiconductor LD. The PL spectrum shows a broadband extending from 1.430 to 1.670 μm and centered at 1.55 μm, corresponding to the intra-4f transition between the first excited (4I13/2) and the ground state (4I15/2) of Er3+. The full width at half maximum (FWHM) of PL peaks increase from 60 to 100 nm with temperature increased from 600 to 1200 °C.
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Document Type: Research Article
Publication date: 2011-12-01
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