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Crystallization Mechanisms of Phase Change (GeSbSn)100−x Co x Optical Recording Films

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Abstract:

In this study, the (GeSbSn)100−x Co x films (x = 0∼13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The ZnS-SiO2 films were used as protective layers. The thicknesses of the (GeSbSn)100−x Co x films and protective layer were 100 nm and 30 nm, respectively. We investigated the effects of Co addition on the thermal property, crystallization kinetics, and crystallization mechanism of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)100−x Co x films were decreased with Co content. It was found that the activation energy of the (GeSbSn)100−x Co x films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.

Keywords: (GESBSN)100-X CO X FILMS; CRYSTALLIZATION ACTIVATION ENERGY; MICROSTRUCTURE

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2011.4005

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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