The microstructure and magnetic properties of multilayer [Os(t)/FePt(x)]n films on a glass substrate with a 10 nm Os buffer layer by ion beam sputtering have been studied as a function of the annealing temperatures between 300 and 800 °C. Here, t = 0.2,
1 or 5 nm and x varied from 10, 20, 25, 50, to 100 nm with its associated n value of 10, 5, 4, 2, and 1, respectively. No diffusion evidence was found in samples with a thin Os layer and t ≥ 1 nm. The average grain size of the multilayer films can be well controlled
by both annealing temperature and thickness of the FePt layer by a very thin Os space layer with t ≥ 1 nm. The enhancement of Hc can be understood from the fact that for a FePt film with an Os spacer layers, the increasing number of Os layer will inhibit the grain
growth of FePt grains and enriches the grain boundary. We have experimentally demonstrated that even with a very thin 1 nm Os spacer layers, the [Os(t)/FePt(x)]n multilayer films can exhibit good hard magnetic properties and are attractive candidates for ultrahigh density
magnetic recording media.
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