A Compact Model for Multi-Island Single Electron Transistors

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Multi-island single electron transistor is an important kind of the single electron transistor, which is convenient to realize the controllable room temperature operation. A novel semi-empirical compact model for the Multi-island single electron transistor is proposed. The new approach combines the orthodox theory of the single electron tunneling through single coulomb island and a novel empirical analysis procedure for the chain of multi coulomb islands to solve the current of the whole multiisland single electron transistor. The tunneling rates are calculated based on the orthodox theory for the single electron tunneling. The tunneling currents representing the first splitted peaks in the coulomb oscillation curves are calculated according to the assumption that the currents through all the coulomb islands are equal to each other at the stable states, while the currents representing the other splitted peaks are constructed and merged together according to the empirical analysis. The model is verified by the traditional SET simulator SIMON and shows much faster calculation speed than SIMON. Therefore, the novel compact model is suitable for the large scale MISET circuit simulation.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3984

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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