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Nanotube Substituted Source/Drain Regions for Carbon Nanotube Transistors for VLSI Circuits

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Aggressive scaling of silicon technology over the years has pushed CMOS devices to their fundamental limits. Pioneering works on carbon nanotube during the last decade possessing exceptional electrical properties have provided an intriguing solution for high performance integrated circuits. So far, at best, carbon nanotubes have been considered only for the channel, with metal electrodes being used for source/drain. Here, alternative schemes of 'All–Nanotube' transistor are presented where even the transistor components are derived from carbon nanotubes which hold the promise for smaller, faster, denser and more power efficient electronics.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3975

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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