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Enhanced Wet Etching of Patterned GaN with Ion Implantation

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We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 °m-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion fluence, and the etching depth could exceed the project range of incident 500 keV Au+ ion. The etch pits could be observed at the bottom of the etched area. The ∼400 nm depth etching could be achieved with high fluence implantation after a long etching time, and the edge of etched area could remain clear until the etching process had passed 40 min. As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect. ∼70 nm wave of the GaN surface was observed. The results of our experiments may suggest an approach to the fabricating of GaN devices.


Document Type: Research Article


Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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