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Study of Novel Self-Alignment Method for Silicon Nanowire

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Abstract:

A novel phenomenon on silicon nanowire(SiNW) is discussed here, which is related to its selfalignment characteristic when a temperature gradient field appears assisted by electric field. For the SiNW grown by vapor-liquid-solid method, it suffers an alignment force when its two terminals' temperature is different. Experiments about this effect have been observed and it has been anticipated that this property can be used in assembling SiNW array. Furthermore, some explanations on this effect have been made in this paper.

Keywords: SELF-ALIGNMENT; SILICON NANOWIRE; TEMPERATURE GRADIENT

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3973

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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