Study of Novel Self-Alignment Method for Silicon Nanowire
Abstract:A novel phenomenon on silicon nanowire(SiNW) is discussed here, which is related to its selfalignment characteristic when a temperature gradient field appears assisted by electric field. For the SiNW grown by vapor-liquid-solid method, it suffers an alignment force when its two terminals' temperature is different. Experiments about this effect have been observed and it has been anticipated that this property can be used in assembling SiNW array. Furthermore, some explanations on this effect have been made in this paper.
Document Type: Research Article
Publication date: December 1, 2011
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