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The Device Performance of Cu(In, Ga)Se2 Solar Cells Influenced by the Type-Inverted Layer

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The type-inversion to n-type at the surface of p-type CuIn1−x Ga x Se2 absorber layer is taken as an important factor for the high efficiency of CuIn1−x Ga x Se2 (CIGS) with low Ga content, however, the further increase of Ga content makes the n-type doping difficult and the type-inverted layer vanish, which may have a negative effect on the device performance. Previous first-principles calculation had shown that the donor density becomes lower and level deeper when Ga content increases, while it's not clear how significantly the changes in the type-inverted layer influence the device performance. Through device simulation, we show that the efficiency decreases obviously as the donor density becomes lower and the level deeper in the inversion layer, thus they are important factors responsible for the limitation of the efficiency of CIGS solar cell, i.e., the efficiency decreases as Ga content exceeds 30%. Our work gives a good example in how to combine the electronic structure calculation of materials and device simulation to explain the experimental observation.
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Keywords: CUIN1-X GA X SE2; DEVICE SIMULATION; ELECTRONIC STRUCTURE CALCULATION; SOLAR CELL; TYPE-INVERSION LAYER

Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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