Skip to main content

Investigation Based on Nano-Electromechanical System Double Si3N4 Resonant Beam Pressure Sensor

Buy Article:

$113.00 plus tax (Refund Policy)


This paper presents a type of NEMS (Nano-Electromechanical System) double Si3N4resonant beams pressure sensor. The mathematical models are established in allusion to the Si3N4 resonant beams and pressure sensitive diaphragm. The distribution state of stress has been analyzed theoretically based on the mathematical model of pressure sensitive diaphragm; from the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm was optimized and then the dominance observed after the double resonant beams are adopted is illustrated. From the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm is optimized, illustrating advantages in the adoption of double resonant beams. The capability of the optimized sensor was generally analyzed using the ANSYS software of finite element analysis. The range of measured pressure is 0∼400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity of the sensor is 498.24 Hz/Kpa, higher than the traditional sensors. Finally the processing techniques of the sensor chip have been designed with sample being successfully processed.


Document Type: Research Article


Publication date: December 1, 2011

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • ingentaconnect is not responsible for the content or availability of external websites

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more