Field Emission from Nanostructured AlN/GaN Films on Si Substrate Prepared by Pulsed Laser Deposition
Nanostructured AlN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AlN/GaN films is considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of field emission (FE) characteristics is attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of AlN/GaN, various FE characteristics can be obtained. It indicates that the optimal thickness of the nanostructured AlN/GaN films exists for their best field emission performance.
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Document Type: Research Article
Publication date: 2011-12-01
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