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Field Emission from Nanostructured AlN/GaN Films on Si Substrate Prepared by Pulsed Laser Deposition

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Nanostructured AlN/GaN films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also deposited for comparison. It is found that the turn-on field of the nanostructured AlN/GaN films is considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of field emission (FE) characteristics is attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of AlN/GaN, various FE characteristics can be obtained. It indicates that the optimal thickness of the nanostructured AlN/GaN films exists for their best field emission performance.
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Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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