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Analytic Model of a Silicon Nanowire pH Sensor

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Abstract:

A simple analytic model of a silicon-nanowire (Si-NW) pH sensor is proposed; this model is based on the solution of the Poisson equation in cylindrical coordinates and the nonlinear Poisson-Boltzmann equation for the Si-NW and an electrolyte, respectively. The simulation results obtained using the proposed model agree well with the experimental data. By using the proposed analytic model, the dependence of the electrical properties on the Si-NW diameter and doping concentration is investigated.

Keywords: NONLINEAR POISSON-BOLTZMAN EQUATION; PH SENSOR; POISSON EQUATION; SILICON NANOWIRE; SURROUNDING-GATE MOSFET (SGMOSFET)

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3991

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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