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Optical and Electrical Properties of Ga-Doped ZnO Nanorod Arrays Fabricated by Thermal Evaporation

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Well-aligned Ga-doped ZnO nanorod arrays with high optical and electrical property were fabricated by catalyst-free thermal evaporation on p-silicon substrate. As the Ga/Zn atom ratio in the source material was tuned from 0 to 0.2, wurtzite structure ZnO nanorod arrays were realized with length of ∼6 μm and growth direction along c-axis. With the addition of Ga, the intensity of the nearband-edge emission was enhanced and the deep-level emissions maintained neglectable. As the Ga/Zn atom ratio increased from 0 to 0.1, the red shift of the near-band-edge emission occurred due to Ga-doping induced band gap renormalization effect related with the enhancement of the carrier density, while the blue shifts of the emission were found once the Ga/Zn ratio is higher than 0.1 resulting from Burstein-Moss effect. The configuration of the vertical-aligned Ga-doped ZnO nanorod arrays on p-Si substrate makes it straightforward for the fabrication of pn nanodiode, which shows an excellent rectifying characteristic with threshold voltage as low as ∼4.7 V with the Ga/Zn atomic ratio of 0.2.


Document Type: Research Article


Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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