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Anisotropic Scattering of Elongated GaSb/GaAs Quantum Dots Embedded Near Two-Dimensional Electron Gas

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Geometrically anisotropic GaSb/GaAs quantum dots elongated along [110] direction, with a lateral aspect ratio of 2∼3, are embedded in the vicinity of AlGaAs/GaAs two-dimensional electron gas, using the molecular beam epitaxy by carefully controlling the Sb4 beam flux and As4 background pressure. The electron mobilities μ , μ parallel and perpendicular to the direction of dot elongation axis are measured as functions of electron concentration n 2D at 4.2 K, respectively. As the increase of n 2D, the mobility discrepancy (μ μ ) is found to be getting larger. This mobility difference is believed to be due to the anisotropic scattering potential of the elongated GaSb quantum dots. Under Born approximation, we propose a model with the constant squared-barrier potential to calculate the n 2D dependence of mobility and reasonable agreement is achieved between the experimental results and theoretical simulation.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3980

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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