Anisotropic Scattering of Elongated GaSb/GaAs Quantum Dots Embedded Near Two-Dimensional Electron Gas
Abstract:Geometrically anisotropic GaSb/GaAs quantum dots elongated along  direction, with a lateral aspect ratio of 2∼3, are embedded in the vicinity of AlGaAs/GaAs two-dimensional electron gas, using the molecular beam epitaxy by carefully controlling the Sb4 beam flux and As4 background pressure. The electron mobilities μ ∥, μ ⊥ parallel and perpendicular to the direction of dot elongation axis are measured as functions of electron concentration n 2D at 4.2 K, respectively. As the increase of n 2D, the mobility discrepancy (μ ∥–μ ⊥) is found to be getting larger. This mobility difference is believed to be due to the anisotropic scattering potential of the elongated GaSb quantum dots. Under Born approximation, we propose a model with the constant squared-barrier potential to calculate the n 2D dependence of mobility and reasonable agreement is achieved between the experimental results and theoretical simulation.
Document Type: Research Article
Publication date: December 1, 2011
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