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Nucleation Sequence of InAs Quantum Dots on Cross-Hatch Patterns

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InAs quantum dots (QDs) are grown via molecular beam epitaxy on cross-hatch pattern (CHP) templates that result from lattice-mismatched epitaxy of In x Ga1−x As on (100)-GaAs substrates. Growth of InAs on low-(x = 0.10) and medium-(x = 0.13) mismatch CHPs with InAs thickness grading from sub- to beyond critical thickness show different stages of QD nucleation that is dictated mainly by surface steps. Tangential surface stress fields arising from the buried network of 110 misfit dislocations (MDs) at the InGaAs/GaAs interface are simulated in two dimensions and found to have a direct correlation to QD height at various locations, implying sequential QD nucleation at the surface intersection of the glide plane of dislocation T-section, cross-hatch intersection, threading dislocation, [1-10] MD line, and [110] MD line, followed by nucleation on the flat areas. Deviations from this nominal sequence is possible due to material anisotropy and are accounted for in the stress calculation by dislocation-specific scaling factors.
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Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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