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Efficiency Enhancement InGaP/GaAs Dual-Junction Solar Cell with Subwavelength Antireflection Nanorod Arrays

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The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated utilizing broad-band and omnidirectional antireflection nanorod arrays. The nanorod arrays were fabricated by self-assembled Ni clusters, followed by inductively-coupled-plasma reactive ion etching. The conversion efficiency measured under one-sun air mass 1.5 global illuminations at room temperature was improved by 10.8%. The light absorption efficiencies of the top InGaP and bottom GaAs cells were also studied under the influence of nanorod arrays. The enhanced absorption efficiency was mostly contributed from the short wavelength absorption by top cell. Surface nanorod arrays served not only as broad-band omnidirectional antireflection layers but also scattering sources. The structure can be further optimized to obtain the maximum conversion efficiency.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4089

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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