Effects of Device and Peripheral Parameters on Transconductance of Silicon Nanowire Transistors
Authors: Zangeneh, Mahmoud; Aghababa, Hossein; Forouzandeh, Behjat
Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 12, December 2011 , pp. 10664-10667(4)
Publisher: American Scientific Publishers
Abstract:This paper presents a general analysis over the transconductance function in silicon nanowire transistors (SNWTs). The transconductance function in SNWTs has been well-discussed and the relation between this function and the physical and peripheral parameters of the SNWT has been precisely investigated. The transconductance expression has been derived as a function of device parameters (e.g., oxide capacitor, electron effective-mass) and applied voltage biases, which helps to understand the essential physics of one-dimensional (1D) nanowire FETs and to interpret numerical simulation results. These simulations demonstrate the transconductance formulation as a function of environmental temperature, voltage biases and oxide layer thickness.
Document Type: Research Article
Publication date: December 1, 2011
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