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Effects of QD Concentrations and Thermal Annealing on the Performance of Self-Assembly QD-OLEDs

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We have fabricated and investigated the effect of CdSe/ZnS quantum dot (QD) concentrations on the performance of self-assembly hybrid inorganic/organic light emitting diodes (QD-OLEDs). The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. There was a QD threshold concentration for the emission of QDs in QD-OLED. Below that threshold concentration we did not observe the QD emission from the QD-OLED. The best performance of QD-OLED was found for the QD concentration of ∼9 × 1011 cm−2. The QD electroluminescence intensity was increased about three times after the annealing of QD-OLED at 80 °C for about 20 minutes in nitrogen atmosphere. The QD electroluminescence peak energy was remain same before and after the annealing of QD-OLED. The maximum external quantum efficiency was around 2.1%. The effect of process parameters and the QD emission mechanism are discussed.


Document Type: Research Article


Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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