Photoreflectance Study of Strained GaAsN/GaAs T-junction Quantum Wires Grown by Metal-Organic Vapor Phase Epitaxy
Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in  and  directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN TQWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.989N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of  and  directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.
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Document Type: Research Article
Publication date: 2011-12-01
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