Decrease of the OFF State Current of Carbon Nanotube Field Effect Transistors via Continuous Repeated Gate Sweeping

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Abstract:

Continuous repeated gate sweeping incorporated with substrate etching step is utilized to decrease the OFF state current in single-walled carbon nanotube field effect transistors with bundled carbon nanotubes. In particular, the effects of continuous repeated gate sweeping on transfer characteristic of transistors are examined. The etching step creates suspension in transistors at contact with metal electrodes as well as causing some single-walled carbon nanotubes to dramatically burn off by electrical current. By repeating gate sweeping, source-drain current gets smaller and smaller. This will eventually lead to the OFF state current less than 2 nA. Defects in the lattice of single-walled carbon nanotubes introduced by multiple gate sweeping could be the reason for this phenomenon. Contribution from possible hole trapping is also considered.

Keywords: CURRENT-VOLTAGE CURVE; FIELD EFFECT TRANSISTOR; GATE SWEEPING; SINGLE-WALLED CARBON NANOTUBES

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3993

Publication date: December 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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