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Influence of Radial Stress on the Performance of Gate-All-Around Ge(110) NW FETs with HfO2 Dielectric

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In this work, a simulation method from strained valence band structures to strained mobility calculation to consider a radial stress at the boundary of HfO2 gate dielectric surrounding Ge(110) nanowire is developed. The simulation implements the radial stress to strain distribution calculation via finite element method and then to valence band calculation. The radial stress at the boundary of gate dielectric pushes the valence subbands downwards in contrast with lattice mismatch strain effects between Ge NW and gate dielectric. The impact of the radial stress on the hole effective masses and density of states of HfO2 gate dielectric surrounding Ge(110) nanowire are also investigated. The potential distribution and holes density distribution are calculated by solving the 2D Poisson equation and Schrödinger equation self-consistently in NW cross section. Hole mobility is obtained by modified Kubo-Greenwood formula. Based on strained valence band structures, the hole density distribution in cross-sectional Ge(110) NW reduces with larger radial stress value. The phonon scattering-limited hole mobility in NW significantly increases as the radial stress increases.
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Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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