@article {Yang:2011:1533-4880:10493,
title = "The Influences of Rapid-Thermal Annealing on the Characteristics of Sr0.6Ba0.4Nb2O6 Thin Film",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2011",
volume = "11",
number = "12",
publication date ="2011-12-01T00:00:00",
pages = "10493-10497",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000012/art00035",
doi = "doi:10.1166/jnn.2011.4016",
keyword = "RAPID THERMAL ANNEALING, DEFECT LEVEL, TEXTURE COEFFICIENT, SR0.6BA0.4NB2O6 THIN FILMS",
author = "Yang, Cheng-Fu and Diao, Chien-Chen and Wu, Chia-Ching and Leu, Ching-Chich",
abstract = "The Sr0.6Ba0.4Nb2O6 (SBN) thin films were successfully prepared on Pt/Ti/Si and SiO2/Si/Al substrates and crystallized subsequently using rapid thermal annealing (RTA) process in ambient atmosphere for 1 min. The surface morphologies
and thicknesses of as-deposited and annealed SBN thin films were characterized by field emission scanning electron microscopy, and the thickness was about 246 nm. As compared with the as-deposited SBN thin films, the RTA-treated process had improved the crystalline structures and also had
large influence on the crystalline orientation. When the annealing temperatures increased from 700 \textdegreeC to 900 \textdegreeC, the diffraction intensities of (410) and (001) peaks apparently increased. Annealed at 900 \textdegreeC, the (001) peak had the maximum texture coefficient and SBN thin films
showed a highly c-axis (001) orientation. The influences of different RTA-treated temperatures on the polarizationapplied electric field (PE) curves and the capacitancevoltage (CV) curves were also investigated.",
}