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The Sr0.6Ba0.4Nb2O6 (SBN) thin films were successfully prepared on Pt/Ti/Si and SiO2/Si/Al substrates and crystallized subsequently using rapid thermal annealing (RTA) process in ambient atmosphere for 1 min. The surface morphologies
and thicknesses of as-deposited and annealed SBN thin films were characterized by field emission scanning electron microscopy, and the thickness was about 246 nm. As compared with the as-deposited SBN thin films, the RTA-treated process had improved the crystalline structures and also had
large influence on the crystalline orientation. When the annealing temperatures increased from 700 °C to 900 °C, the diffraction intensities of (410) and (001) peaks apparently increased. Annealed at 900 °C, the (001) peak had the maximum texture coefficient and SBN thin films
showed a highly c-axis (001) orientation. The influences of different RTA-treated temperatures on the polarization–applied electric field (P–E) curves and the capacitance–voltage (C–V) curves were also investigated.
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