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The Influences of Rapid-Thermal Annealing on the Characteristics of Sr0.6Ba0.4Nb2O6 Thin Film

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The Sr0.6Ba0.4Nb2O6 (SBN) thin films were successfully prepared on Pt/Ti/Si and SiO2/Si/Al substrates and crystallized subsequently using rapid thermal annealing (RTA) process in ambient atmosphere for 1 min. The surface morphologies and thicknesses of as-deposited and annealed SBN thin films were characterized by field emission scanning electron microscopy, and the thickness was about 246 nm. As compared with the as-deposited SBN thin films, the RTA-treated process had improved the crystalline structures and also had large influence on the crystalline orientation. When the annealing temperatures increased from 700 °C to 900 °C, the diffraction intensities of (410) and (001) peaks apparently increased. Annealed at 900 °C, the (001) peak had the maximum texture coefficient and SBN thin films showed a highly c-axis (001) orientation. The influences of different RTA-treated temperatures on the polarization–applied electric field (PE) curves and the capacitance–voltage (CV) curves were also investigated.
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Keywords: DEFECT LEVEL; RAPID THERMAL ANNEALING; SR0.6BA0.4NB2O6 THIN FILMS; TEXTURE COEFFICIENT

Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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