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Electron Eigenstates in Quantum Dots Revealed by Temperature Derivative Capacitance Spectroscopy

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A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.
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Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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