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A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

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Abstract:

A unified drain current model for undoped or lightly doped symmetric double-gate and surrounding-gate MOSFETs incorporating velocity saturation effect is proposed in this paper. The unified charge-based core model for undoped or lightly doped double-gate and surrounding-gate MOSFETs is presented first based on the previously published separate models. Caughey-Thomas engineering mobility model with its exponent factor n = 2 is then integrated self-consistently into the unified drain current model development of the two device structures. Extensive two dimensional and three dimensional device simulations are performed to validate the proposed model. Good agreements of the output and transfer characteristics between the unified model and the numerical simulations are obtained for both the double-gate and surrounding-gate MOSFETs. Symmetry property of the proposed unified current model is obtained with the exponent factor n = 2 in Cauhey-Thomas Model.

Keywords: DOUBLE GATE; SURROUNDING GATE; UNIFIED MODEL

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2011.3983

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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