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Program and Read Scaling Trade-Offs in Phase Change Memories

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This paper investigates the scaling perspectives of Phase Change Memory technology by analyzing the effects of geometrical dimensions reduction and the read voltage scaling on program and read operations. To this end, we derive analytical expressions which allow us to estimate the dependence of the RESET and read current on key geometrical parameters of the memory cell, such as heater size and chalcogenide layer thickness.
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Keywords: LANCE CELL; NON-VOLATILE MEMORIES; PHASE CHANGE MEMORIES; SCALING ANALYSIS

Document Type: Research Article

Publication date: 2011-12-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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