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Valence Excitations and Dopant Distribution of Al Doped ZnO Nanowires Analyzed by Electron Energy Loss Spectroscopy

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Valence electron energy loss spectroscopy (VEELS) with scanning transmission electron microscopy (STEM) has been employed to probe the valence excitations and dopant distribution of Al doped ZnO nanowires. The results reveal that while the typical Al concentration is on the order of 1020 1/cm3, Al tends to segregate at the surface leading to an Al-rich sheath. In VEEL spectra, O-2p, Zn-3d, Al-3p, O-2s, interband transitions as well as bulk plasmon have been identified. The bulk plasmon peak is blue-shifted, and the projected interband transition decreases from 2.14 to 1.88 eV as the doping concentration increases from 0.83·1020 to 2.18·1020 1/cm3.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4983

Publication date: November 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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