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Preparation and Field-Emission of TaSe2 Nanobelt Quasi-Arrays, and Electrical Transport of Its Individual Nanobelt

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3R-TaSe2 nanobelt quasi-arrays were gown on a Ta foil by a facile two-step method, namely, firstly the TaSe3 nanobelt arrays were grown on a Ta foil by a surface-assisted chemical vapor transport, and then they were pyrolyzed to 3R-TaSe2 nanobelt quasi-arrays in vacuum. The nanobelts have low work function and the Ta foil has high conductivity, so the nanobelt arrays possess good electronic field emission performance with a low turn-on (3.6 V/μm) and threshold fields (4.3 V/μm) (which are defined as the macroscopic field required to produce a current density of 10 μA/cm2 and 1 mA/cm2, respectively) and a high enhancement factor (1045) at an emission distance of 200 μm. The electric transport of the individual nanobelt reveals that it is a high-conductive semiconductor, and observed by the variable-range hopping model. It suggests that the nanobelts have potential applications in field emission and field effect transistors.
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Document Type: Research Article

Publication date: 2011-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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