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Emission Evolution of α-Silicon Nitride Nanowires with Temperature

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Abstract:

The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.

Keywords: NANOWIRES; PHOTOLUMINESCENCE; SILICON NITRIDE; TEMPERATURE

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2011.5285

Publication date: 2011-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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