Study the Formation Mechanism of Silicon Carbide Polytype by Silicon Carbide Nanobelts Sintered Under High Pressure
In this paper, in order to reveal the formation mechanism of SiC polytype, four SiC specimens sintered under high pressure has been investigated, after being prepared from SiC nanobelts as initial powders. The structure and morphology variation dependence of SiC specimens with temperature and pressure was studied based on experimental data obtained by XRD, SEM, and Raman. The results show that SiC lattice structure and the crystallite size are greatly affected by pressure between 2 and 4 GPa under different sintering temperatures of 800 and 1200 °C. At the largest applied pressure and temperature, 4 GPa and 1200 °C, 3C-SiC crystal structure can be changed into to R-SiC due to the stress resulted in dislocations instead of planar defects. Based on our results, the multiquantum-well structure based a single one-dimensional nanostructure can be achieved by applying high pressure at certain sintered temperature.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 2011-11-01
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites