In this paper, in order to reveal the formation mechanism of SiC polytype, four SiC specimens sintered under high pressure has been investigated, after being prepared from SiC nanobelts as initial powders. The structure and morphology variation dependence of SiC specimens with temperature
and pressure was studied based on experimental data obtained by XRD, SEM, and Raman. The results show that SiC lattice structure and the crystallite size are greatly affected by pressure between 2 and 4 GPa under different sintering temperatures of 800 and 1200 °C. At the largest applied
pressure and temperature, 4 GPa and 1200 °C, 3C-SiC crystal structure can be changed into to R-SiC due to the stress resulted in dislocations instead of planar defects. Based on our results, the multiquantum-well structure based a single one-dimensional nanostructure can
be achieved by applying high pressure at certain sintered temperature.
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