Nitrogen Doped ZnO Thin Films Prepared by Photo-Assisted Metal-Organic Chemical Vapor Deposition

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Nitrogen-doped ZnO (ZnO:N) films were prepared by photo-assisted metal-organic chemical vapor deposition technique using NH3 as N doping source. The effects of in-situ light irradiation on the properties of ZnO:N films were studied by Hall measurements, X-ray diffraction, Raman scattering, and X-ray photoelectron spectroscopy. The results show that stable p-type ZnO:N films with a hole concentration of 3.61 × 1017 cm−3 was successfully achieved. Moreover, introducing proper in-situ light irradiation during the growth process can not only effectively improve the crystalline quality of ZnO films, but also enhance the activity of (N)O (N occupies O site) acceptors by removing the undesirable hydrogen atoms from ZnO:N films. Both effects are benefit for the p-type conductivity formation. Our results indicate that photo-assisted MOCVD maybe an effective technology to realize device-quality p-type ZnO:N films.


Document Type: Research Article


Publication date: November 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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