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Improving Photovoltaic Properties by Incorporating Solution-Processable Functionalized Graphene Into Poly(3-Octylthiophene)/Phenyl c61 Butyric Acid Methyl Ester Photovoltaic Devices

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Abstract:

We report the optoelectronic properties occurring in solution-processable functionalized graphene (SPFGraphene)—PCBM/poly(3-octylthiophene) (P3OT) composites. The structural configuration of the devices is ITO/PEDOT:PSS/P3OT:PCBM-SPFGraphene/LiF/Al. The best results were obtained with a P3OT/PCBM (1:1) mixture with 8 wt% of SPFGraphene in an open-circuit voltage (V oc) of 0.65 V, a short-circuit current density (J sc) of 4.2 mA/cm2, and a fill factor (FF) of 0.35, which led to a power conversion efficiency of 0.95% at illumination at 100 mW/cm2 AM 1.5. In the P3OT:PCBM-SPFGraphene composite, the SPFGraphene acted as exciton dissociation sites and provided the transport pathway of the lowest unoccupied molecular orbital (LUMO)-graphene-Al. Doping SPFGraphene into P3OT resulted in appropriate energetic distance between the highest occupied molecular orbital (HOMO) and LUMO of the donor/acceptor for a high open circuit voltage and provided higher exciton dissociation volume mobility of carrier transport for a large short-circuit current density.

Keywords: ELECTRONIC MOBILITY; GRAPHENE; HOMO; LUMO; SPFGRAPHENE

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.5213

Publication date: November 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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