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Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions

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Conduction and valence band discontinuities (band offsets) in the heterojunctions consisting of ZnO/4H-SiC, ZnO/GaAs, MgO/4H-SiC, MgO/AlN, InN/ZnO, InN/GaAs, MgO/InN, and InN/4H-SiC, were precisely determined by X-ray photoelectron spectroscopy (XPS) measurement. As an example, the XPS measurement on the ZnO/4H-SiC heterojunction is described in detail in the beginning of the section of the experiments. We also analyzed several factors which may have impact on the band offset in a practical heterojunction. The deviation in band offset induced by both polar and non-polar heterojunction band bending from the true value was also characterized by taking into account the intrinsic polarization field in the heterojunction consisting of the two polar materials.
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Document Type: Review Article

Publication date: 2011-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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