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The Research Progress of Quantum Dot Lasers and Photodetectors in China

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Self-assembled In(Ga)As/GaAs quantum dots (QDs), known as "artificial atoms" for their fully quantized electronic states, show unique physical properties and new prospects for applications. Based on the QDs, an increasing number of leading laboratories on the world engage in developing novel optoelectronic devices with special advantages over existing devices. This paper reviews the current research developments in self-assembled QD devices in China, covering QD lasers and inter sublevel QD photodetectors. QD devices in China are undergoing a rapid advance and have achieved the world's best results in terms of certain characteristics.


Document Type: Review Article

DOI: http://dx.doi.org/10.1166/jnn.2011.5310

Publication date: November 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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