@article {Hadj Alouane:2011:1533-4880:9251,
title = "Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2011",
volume = "11",
number = "10",
publication date ="2011-10-01T00:00:00",
pages = "9251-9255",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000010/art00128",
doi = "doi:10.1166/jnn.2011.4298",
keyword = "ION IMPLANTATION, QUANTUM DASHES, SELECTIVE INTERMIXING, THERMAL ACTIVATION, INAS/INP, PHOTOLUMINESCENCE",
author = "Hadj Alouane, M. H. and Ilahi, B. and Maaref, H. and Salem, B. and Aimez, V. and Morris, D. and Gendry, M.",
abstract = "We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease
from 238 to 42 meV when the ion implantation dose increases from 1011 cm2 to 5 \texttimes 1014 cm2, which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed
to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent
PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.",
}