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Synthesis of 3C-SiC Nanocrystals at the SiO2/Si Interface by CO2 Thermal Treatment

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We report 3C-SiC nano-crystals synthesis by thermal annealing of SiO2/Si wafers in CO2 gas. The nano-crystals have been characterized using scanning electron microscopy and atomic force microscopy. These results are correlated with selective area electron diffraction paterns, and transmission electron microscopy observations that evidence the formation of cubic SiC nano-crystals epitaxied on Si. In our experimental conditions, the crystals size is in the range 10–60 nm, increasing with the treatment time, as the crystals density. Using isotopic labelled SiO2 associated with Nuclear Reaction Analysis (NRA) and Nuclear Narrow Resonance Profiling (NRP), oxygen exchanges between CO2 and SiO2 could be evidenced.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4286

Publication date: October 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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