Photocurrent Generation in Ge Nanocrystal/Si Systems
We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO2. These Ge nanostructures/SiO2/n +-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350–600 nm range correlates well with the absorbance of Ge.
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Document Type: Research Article
Publication date: 2011-10-01
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